Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance

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概要

• 論文の詳細を見る

• Hydrogen (H) plasma excited by electron cyclotron resonance (ECR) offers a powerful technique for cleaning semiconductor surfaces at low temperature and for realizing atomically flat surfaces. This paper evaluates the neutralization of impurities near semiconductor surfaces during the H-plasma cleaning process, which is known as the hydrogenation effect. It was found that hydrogenation in the present ECR cleaning process is quite different from that in the usual radio-frequency plasma. It was found that hydrogenation with the H-plasma excited with ECR is dependent on the angle of incidence of the plasma beam and is also dependent on the presence of the surface oxide and on the related surface flatness in the atomic level.

• 社団法人応用物理学会の論文
• 1991-11-30

著者

• KISHIMOTO Akihiro

  Faculty of Engineering, Hiroshima University

• HAMAOKA Kazuhiko

  Faculty of Engineering, Hiroshima University

• KOUI Tomoaki

  Faculty of Engineering, Hiroshima University

• Koui Tomoaki

  Faculty Of Engineering Hiroshima University

• Suemune I

  Hiroshima Univ. Higashihiroshima

• Kishimoto A

  Faculty Of Engineering Hiroshima University

• Yamanishi Masamichi

  Faculty Of Engineering Hiroshima University

• Suemune Ikuo

  Faculty Of Engineering Hiroshima University

• Hamaoka Kazuhiko

  Faculty Of Engineering Hiroshima University

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