Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
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概要
- 論文の詳細を見る
We report the growth of zinc-blende ZnSe/MgS superlattices (SLs) on GaAs (001) substrates. The SLs were grown with metalorganic vapor phase epitaxy by selecting appropriate precursors for Mg and S. MgS naturally forms rocksalt structures, but zinc-blende MgS layers were grown. The lattice constant of MgS was estimated to be 5.59 Å. X-ray diffraction measurements show that the ZnSe/MgS SLs are grown coherently to the GaAs substrates up to the total thicknesses of ~ 3000 Å.
- American Institute of Physicsの論文
- 1996-02-05
著者
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Kumano H
Research Institute For Electronic Science Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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Suemune I
Hiroshima Univ. Higashihiroshima
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