GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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GANAPATHY Sasikala
Research Institute for Electronic Science, Hokkaido University
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ZHANG Xi
Research Institute for Electronic Science, Hokkaido University
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KIM B.
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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SEONG Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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