Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
スポンサーリンク
概要
- 論文の詳細を見る
The realization of solid-state photon sources that are capable of on-demand generation of an entangled single-photon pair at a time is highly desired for quantum information processing and communication. A new method of generating an entangled single-photon pair at a time is proposed employing Cooper-pair-related radiative recombination in a quantum dot (QD). Cooper pairs are bosons and the control of their number states is difficult. Pauli's exclusion principle on quasiparticles in a discrete state of a QD regulates the number state of the generated photon pairs in this scheme. The fundamental heterostructures for constructing superconductor-based quantum-dot light-emitting diodes (SQ-LEDs) and the fundamental operation conditions of SQ-LED will be discussed. The experimental studies on Cooper-pair injection into the related semiconductor structures will be also discussed.
- Japan Society of Applied Physicsの論文
- 2006-12-15
著者
-
JO Masafumi
Research Institute for Electronic Science, Hokkaido University
-
KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
-
Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
-
Hanamura Eiichi
Faculty Of Photonics Science And Technology Chitose Institute Of Science And Technology And Crest Ja
-
Kan Hirofumi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Akazaki Tatsushi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Tanaka Kazunori
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Uesugi Katsuhiro
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Endo Michiaki
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
Takayanagi Hideaki
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Yamanishi Masamichi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
-
Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
Jo Masafumi
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
関連論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Nucleation Stages of Carbon Nanotubes on SiC(0001) by Surface Decomposition
- A Cooper-Pair Light-Emitting Diode : Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime
- Electroluminescence of Oxygen Deficient YAlO_3 Crystals
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Discrimination of Compound Semiconductor Heterointerfaces by Simultaneous Observations of Atomic Force Microscopy and Lateral Force Microscopy
- Conversion of Light Propagation Direction for Highly Efficient Solar Cells
- Cooper-Pair Radiative Recombination in Semiconductor Heterostructures : Impact on Quantum Optics and Optoelectronics (Centennial Anniversary of Superconductivity) -- (SELECTED TOPICS IN APPLIED PHYSICS)
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Photon-pair generation based on superconductivity
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
- Electroluminescence of Oxygen-Deficient YAlO3 Crystals with Dopants
- Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Enhanced Photon Extraction from a Quantum Dot Induced by a Silver Microcolumnar Photon Reflector
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Metal-embedded Nanocone Structure Incorporating an InAs QD for Efficient Single-photon Emission
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot