Metal-embedded Nanocone Structure Incorporating an InAs QD for Efficient Single-photon Emission
スポンサーリンク
概要
- 論文の詳細を見る
Single-photon sources of high photon-extraction efficiency are strongly needed for the practical use in quantum field. We succeed in fabricating metal (sliver)-embedded GaAs nanocone structure incorporating single InAs quantum dots. Efficient single-photon emission is demonstrated using autocorrelation measurements and the photon-extraction efficiency as high as 24.6% is obtained from the structure.
- 一般社団法人電子情報通信学会の論文
- 2013-05-10
著者
-
ODASHIMA Satoru
Research Institute for Electronic Science, Hokkaido University
-
Odashima Satoru
Research Institute For Electronic Science Hokkaido University
-
Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
Nakajima Hideaki
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
-
LIU Xiangming
Research Institute for Electronic Science, Hokkaido University
-
ASANO Tomoya
Research Institute for Electronic Science, Hokkaido University
関連論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Nucleation Stages of Carbon Nanotubes on SiC(0001) by Surface Decomposition
- A Cooper-Pair Light-Emitting Diode : Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Discrimination of Compound Semiconductor Heterointerfaces by Simultaneous Observations of Atomic Force Microscopy and Lateral Force Microscopy
- Conversion of Light Propagation Direction for Highly Efficient Solar Cells
- Cooper-Pair Radiative Recombination in Semiconductor Heterostructures : Impact on Quantum Optics and Optoelectronics (Centennial Anniversary of Superconductivity) -- (SELECTED TOPICS IN APPLIED PHYSICS)
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Photon-pair generation based on superconductivity
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
- Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Enhanced Photon Extraction from a Quantum Dot Induced by a Silver Microcolumnar Photon Reflector
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Metal-embedded Nanocone Structure Incorporating an InAs QD for Efficient Single-photon Emission
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot