Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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ARITA Munetaka
Research Center for Advanced Science and Technology, University of Tokyo
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Avramescu Adrian
北海道大学電子科学研究所
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Research Institute for Electronic Science, Hokkaido University
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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SHIMOYAMA Norio
Trichemical Laboratory Inc.
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Ritsumeikan University, College of Science and Engineering
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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Avramescu Adrian
Research Institute For Electronic Science Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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UETA Akio
Research Institute for Electronic science, Hokkaido University
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Ueta Akio
Research Institute For Electronic Science Hokkaido University
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Suemune I
Hiroshima Univ. Higashihiroshima
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Numai T
Opto-electronics Research Laboratories Nec Corporation
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Numai Takahiro
Research Institute For Electronic Science Hokkaido University
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Arita M
Research Institute For Electronic Science Hokkaido University
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Arita Munetaka
Research Center For Advanced Science And Technology University Of Tokyo
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Shimoyama N
Tri Chemical Laboratories Inc. Yamanashi Jpn
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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SHIMOYAMA Norio
Trichemical Laboratory
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy