Catalytic Precracking of Amino-As in Metalorganic Molecular-Beam Epitaxy of GaAs
スポンサーリンク
概要
- 論文の詳細を見る
Precracking of an As source employing the catalytic effect of GaAs is proposed for the growth of GaAs in metalorganic molecular-beam epitaxy. The As source used was an amino-As, tris-dimethylamino-arsenic {TDMAAs, As[N(CH_3)_2]_3}. The enhancement of the growth rate was observed for an optimum combination of the substrate temperature and the cracking temperature. The mechanism of the growth enhancement was studied by means of quadrupole mass spectrometry. It is shown that the intermediate As species of the amino-As play a prominent role in growth enhancewent.
- 社団法人応用物理学会の論文
- 1992-09-01
著者
-
KOUI Tomoaki
Faculty of Engineering, Hiroshima University
-
Koui Tomoaki
Faculty Of Engineering Hiroshima University
-
Suemune I
Hiroshima Univ. Higashihiroshima
-
Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
-
Suemune Ikuo
Faculty Of Engineering Hiroshima University
-
MIYAKOSHI Kaoru
Faculty of Engineering, Hiroshima University
-
FUJII Kazuyuki
Faculty of Engineering, Hiroshima University
-
Miyakoshi Kaoru
Faculty Of Engineering Hiroshima University
関連論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
- Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
- Comparison of Electrical and Optical Properties of n-i-i and p-i-n ZnSSe Heterostructure Diodes
- Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Investigation of Linearity of Photoacoustic Characteristics on Semiconductors Measured by Michelson Interferometry : Photoacoustic Spectroscopy
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy
- Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
- Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Characterization of Nitrogen-Doped ZnSe and ZnS_Se_ Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures
- High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
- Catalytic Precracking of Amino-As in Metalorganic Molecular-Beam Epitaxy of GaAs
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance : Beam Induced Physics and Chemistry
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance
- Decomposition Mechanism of Triethyl-Arsenic on a GaAs Surface for Metalorganic Molecular-Beam Epitaxy : Role of Hydrogen Radicals
- Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
- Theoretical Estimation of Leakage Current in II-VI Heterostructure Lasers
- Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy
- High-Resolution Patterning of Luminescent Porous Silicon with Photoirradiation
- Increase in Nonradiative Recombination Lifetimes in Semi-Insulating GaAs Observed by a Photoacoustic Technique
- Photoirradiation Effect on Photoluminescence from Anodized Porous Silicons and Luminescence Mechanism
- Study of Luminescent Region in Anodized Porous Silicons by Photoluminescence Imaging and Their Microstructures