Low-Temperature Selective Epitaxial Growth of GaAs Using Triethylgallium and Amino-As in Metalorganic Molecular Beam Epitaxy

概要

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Selective-area growth of GaAs was achieved at low temperatures up to 400℃ by metalorganic molecular beam epitaxy using triethylgallium (TEG) and an amino-As, tris-dimethylamino arsenic (TDMAAs). We found that growth processes near the edges of selectively grown area were highly dependent on the shapes of mask edges. The mechanism of selective-area growth was studied by quadrupole mass spectrometry. The catalytic cracking of both TEG and TDMAAs on GaAs surfaces and absence of such on SiO_x mask surfaces led to growth selectivity. Simultaneous supply of As_4 and TEG on SiO_x surfaces was found to enhance the decomposition of TEG dramatically, which resulted in the deposition of polycrystalline GaAs on SiO_x surfaces.
社団法人応用物理学会の論文
1994-06-15