Increase in Nonradiative Recombination Lifetimes in Semi-Insulating GaAs Observed by a Photoacoustic Technique
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概要
- 論文の詳細を見る
Large increases in nonradiative recombination lifetimes were observed for the first time in a In-doped semi-insulating GaAs. The variation ratio of the lifetime increase is over 180 for the incident optical power of 8 mW/cm^2. The increase in the diffusion length associated with the lifetime increase in the bulk is also indicated.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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YAMANISHI Masamichi
Faculty of Engineering, Hiroshima University
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Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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Uesugi Norio
Faculty Of Engineering Hiroshima University
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KAN Yasu
Faculty of Engineering, Hiroshima University
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Kan Yasu
Faculty Of Engineering Hiroshima University
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