High-Resolution Patterning of Luminescent Porous Silicon with Photoirradiation
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概要
- 論文の詳細を見る
Selective formation of porous layers with micrometer dimensions was achieved with photoirradiation on a silicon surface with a patterned impurity distribution, and the mechanism was studied. Diffusion of photogenerated holes along an n-type silicon surface and the resultant accumulation of the holes in the potential well formed in p-type stripes embedded on the n-type surface were attributed to be the main factors for the selective formation. The saturation of the porous layer formation was observed at the depth of the p-n junction, and the resolution limit in the patterning was discussed from the viewpoint of trapping of the holes with the potential barrier at the p-n junctions.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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SUEMUNE Ikuo
Faculty of Engineering, Hiroshima University
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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NOGUCHI Nobuaki
Faculty of Engineering, Hiroshima University
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Noguchi Nobuaki
Faculty Of Engineering Hiroshima University
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