Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The role of indium on the growth surfaces of GaNAs was studied with metalorganic molecular-beam epitaxy. GaNAs was grown with and without triethylindium (TEIn) supply. High-resolution X-ray diffraction measurements reveal an increase in nitrogen incorporation in GaNAs with TEIn supply and negligible indium incorporation. This indicates that indium plays the role of a surfactant on the growth surface and enhances nitrogen incorporation in GaNAs.
- 社団法人応用物理学会の論文
- 1999-11-15
著者
-
SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
-
UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
-
Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
-
Suemune I
Hiroshima Univ. Higashihiroshima
-
MOROOKA Nobuki
Research Institute for Electric Science, Hokkaido University
-
Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
-
Morooka Nobuki
Research Institute For Electric Science Hokkaido University
-
Uesugi K
Hokkaido Univ. Sapporo Jpn
-
Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
-
Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
関連論文
- 2P369 Microtomographic analysis of Drosophila brain(44. Neuro-biophysics,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- Metalorganic MBE Growth of Nitrogen-doped ZnSe:TAN Doping and Nitrogen Plasma Doping
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Hard X-Ray Microtomography Using X-Ray Imaging Optics
- Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
- Comparison of Electrical and Optical Properties of n-i-i and p-i-n ZnSSe Heterostructure Diodes
- Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy
- Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
- Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Nucleation Stages of Carbon Nanotubes on SiC(0001) by Surface Decomposition
- A Cooper-Pair Light-Emitting Diode : Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures
- High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
- Catalytic Precracking of Amino-As in Metalorganic Molecular-Beam Epitaxy of GaAs
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance : Beam Induced Physics and Chemistry
- Evaluation of Hydrogenation on Semiconductor Surfaces Treated with Hydrogen-Plasma Beam Excited by Electron Cyclotron Resonance
- Decomposition Mechanism of Triethyl-Arsenic on a GaAs Surface for Metalorganic Molecular-Beam Epitaxy : Role of Hydrogen Radicals
- Mass Spectrometric Study and Modeling of Decomposition Process of Tris-Dimethylamino-Arsenic on (001) GaAs Surface
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Discrimination of Compound Semiconductor Heterointerfaces by Simultaneous Observations of Atomic Force Microscopy and Lateral Force Microscopy
- Photoirradiation Effect on Photoluminescence from Anodized Porous Silicons and Luminescence Mechanism
- Study of Luminescent Region in Anodized Porous Silicons by Photoluminescence Imaging and Their Microstructures
- Conversion of Light Propagation Direction for Highly Efficient Solar Cells
- Cooper-Pair Radiative Recombination in Semiconductor Heterostructures : Impact on Quantum Optics and Optoelectronics (Centennial Anniversary of Superconductivity) -- (SELECTED TOPICS IN APPLIED PHYSICS)
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Photon-pair generation based on superconductivity
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
- Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Enhanced Photon Extraction from a Quantum Dot Induced by a Silver Microcolumnar Photon Reflector
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Metal-embedded Nanocone Structure Incorporating an InAs QD for Efficient Single-photon Emission
- Fiber-Based Bidirectional Solid-State Single-Photon Emitter Based on Semiconductor Quantum Dot