GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
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概要
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GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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ZHANG Xi
Research Institute for Electronic Science, Hokkaido University
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SEONG Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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Kim B.
Centre For Frontier Materials And Department Of Material Science And Engineering Kwangju Institute O
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Seong Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Zhang Xi
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Ganapathy Sasikala
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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