Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography

概要

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Preparation of a highly ordered and packed array of ZnCdS quantum dots (QDs) by selective-area growth (SAG) is reported. For this purpose, we have developed a method to prepare nanoscale mask openings with an atomic force microscope (AFM) for SAG employing electron-beam-induced carbonaceous films. AFM anodization in a modulated-amplitude pulsed bias mode is applied, making it possible to obtain dotlike patterns with a resolution of $\sim 26$ nm and an interdot distance of $\sim 100$ nm in the masks ready for SAG@. Nanoscale SAG of ZnCdS and ZnMgCdS alloys by metalorganic molecular-beam epitaxy is studied on (001) GaAs surfaces masked with the carbonaceous film. The array of ZnCdS/ZnMgCdS quantum dots each with a size of $\sim 26$ nm as defined by the mask openings, and with a density of $1\times 10^{10}$ cm-2, is successfully grown with this method. The photoluminescence from the dot array, recorded at 30 K, is strong and shows a 6 meV blueshift as compared with that observed from the uniformly grown region.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-03-30