Suemune Ikuo | Research Institute For Electronic Science Hokkaido University
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概要
関連著者
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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Suemune I
Hiroshima Univ. Higashihiroshima
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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SHIMOYAMA Norio
Trichemical Laboratory
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SHIMOYAMA Norio
Trichemical Laboratory Inc.
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Avramescu Adrian
Research Institute For Electronic Science Hokkaido University
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Shimoyama N
Tri Chemical Laboratories Inc. Yamanashi Jpn
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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Avramescu Adrian
北海道大学電子科学研究所
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Sato Go
Research Institute For Electronic Science Hokkaido University
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Ueta Akio
Research Institute For Electronic Science Hokkaido University
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鈴木 久男
静岡大学工学部物質工学科
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Sato G
Hokkaido Univ. Sapporo Jpn
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Sato Go
Department Of Biochemistry Hoshi University School Of Pharmacy And Pharmaceutical Sciences
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Kumano H
Research Institute For Electronic Science Hokkaido University
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OBINATA Toshio
Research Institute for Electronic Science, Hokkaido University
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Suzuki Hideki
Research Institute For Electronic Science Hokkaido University
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鈴木 久男
静岡大 創造科学技術大学院
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NASHIKI Hiroyuki
Research Institute for Electronic Science, Hokkaido University
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Numai Takahiro
Research Institute For Electronic Science Hokkaido University
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Nashiki Hiroyuki
Research Institute For Electronic Science Hokkaido University
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ARITA Munetaka
Research Center for Advanced Science and Technology, University of Tokyo
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NUMAI Takahiro
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Ritsumeikan University, College of Science and Engineering
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UETA Akio
Research Institute for Electronic science, Hokkaido University
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Numai T
Opto-electronics Research Laboratories Nec Corporation
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Arita M
Research Institute For Electronic Science Hokkaido University
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Arita Munetaka
Research Center For Advanced Science And Technology University Of Tokyo
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Hoshiyama Mitsuo
Research Institute For Electronic Science Hokkaido University
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平野 克己
High Energy Accelerator Res.organization Ibaraki Jpn
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HIRANO Kenkichi
Research Institute for Electronic Science, Hokkaido University
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HAYASHI Yujiro
Research Institute for Electronic Science, Hokkaido University
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AKAZAKI Tatsushi
CREST, Japan Science and Technology Agency
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JO Masafumi
Research Institute for Electronic Science, Hokkaido University
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KUMANO Hidekazu
Department of Physics, Hokkaido University
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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Nabetani Yoichi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Hayashi Yujiro
Research Institute For Electronic Science Hokkaido University
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Sasikala Ganapathy
Research Institute For Electronic Science Hokkaido University
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Matsumoto Takashi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Jo Masafumi
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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兵藤 一行
高エネルギー加速器研究機構 物質構造科学研究所 放射光科学研究施設
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兵藤 一行
筑波大学 放射線
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兵藤 一行
高エネルギー加速器研究機構
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Hyodo K
High Energy Accelerator Res. Organization
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HOSHIYAMA Mitsuo
Research Institute of Applied Electricity, Hokkaido University
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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TANAKA Kazunori
Central Laboratory, Hamamatsu Photonics
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Asano Yasuhiro
Graduate Student Department Of Applied Physics And Chemistry Fukui University Of Technology
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SASIKALA Ganapathy
Research Institute for Electronic Science, Hokkaido University
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NABETANI Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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MATSUMOTO Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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SEONG Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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ZHANG Xi
Research Institute for Electronic Science, Hokkaido University
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SEONG Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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SHIMOZAWA Togo
Research Institute for Electronic Science, Hokkaido University
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TAWARA Takehiko
Research Institute for Electronic Science, Hokkaido University
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Kim B.
Centre For Frontier Materials And Department Of Material Science And Engineering Kwangju Institute O
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Maeng J.-t.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Shimozawa Togo
Research Institute For Electronic Science Hokkaido University
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Nakahara Jun'ichiro
Department Of Physics Hokkaido University
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Sasaki Masahide
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Asano Yasuhiro
Graduate School Of Engineering Hokkaido University
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KURAMITSU Shuhei
Research Institute for Electronic Science, Hokkaido University
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TANAKA Kazunori
CREST, Japan Science and Technology Agency
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SASAKURA Hirotaka
Research Institute for Electronic Science, Hokkaido University
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INOUE Ryotaro
CREST, Japan Science and Technology Agency
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TAKAYANAGI Hideaki
CREST, Japan Science and Technology Agency
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HANAMURA Eiichi
Japan Science and Technology Agency
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ODASHIMA Satoru
Research Institute for Electronic Science, Hokkaido University
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Jo Masafumi
Quantum Dot Research Center National Institute For Materials Science
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MOROOKA Nobuki
Research Institute for Electric Science, Hokkaido University
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Akahane Kouichi
National Inst. Information And Communications Technol. (nict) Tokyo Jpn
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Morooka Nobuki
Research Institute For Electric Science Hokkaido University
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Odashima Satoru
Research Institute For Electronic Science Hokkaido University
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Kuramitsu Shuhei
Research Institute For Electronic Science Hokkaido University
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Hanamura Eiichi
Faculty Of Photonics Science And Technology Chitose Institute Of Science And Technology And Crest Ja
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Thilakan Periyasamy
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Thilakan Periyasamy
Research Institute For Electronic Science Hokkaido University
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Tanaka Satoru
Research Institute For Electronic Science Hokkaido University
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Shimoyama Norio
Trichemical Laboratory Inc., 8154–217 Uenohara, Kitatsurugun, Yamanashi 409–01, Japan
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Seong Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea
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Seong Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Kan Hirofumi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Akazaki Tatsushi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Tanaka Kazunori
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Uesugi Katsuhiro
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Endo Michiaki
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Takayanagi Hideaki
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Yamanishi Masamichi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Jahan Nahid
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Huh Jae-Hoon
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Hermannstadter Claus
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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NAKAHARA Jun'ichiro
Department of Physics, Hokkaido University
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Zhang Xi
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Numai Takahiro
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
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Ebihara Masato
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Ueta Akio
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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SATO Go
Research Institute for Electronic Science, Hokkaido University
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Ganapathy Sasikala
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Sasikala Ganapathy
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Nabetani Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
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Maeng J.-T.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Avramescu Adrian
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Hoshiyama Mitsuo
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Matsumoto Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
著作論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- A Cooper-Pair Light-Emitting Diode : Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Nucleation and Faceting in Selectively Grown ZnS Pyramidal Dot Array for Short-Wavelength Light Emitters
- Discrimination of Compound Semiconductor Heterointerfaces by Simultaneous Observations of Atomic Force Microscopy and Lateral Force Microscopy
- Conversion of Light Propagation Direction for Highly Efficient Solar Cells
- Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
- Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths