Sasikala Ganapathy | Research Institute For Electronic Science Hokkaido University
スポンサーリンク
概要
関連著者
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Nabetani Yoichi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Sasikala Ganapathy
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Matsumoto Takashi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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Kumano H
Research Institute For Electronic Science Hokkaido University
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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SASIKALA Ganapathy
Research Institute for Electronic Science, Hokkaido University
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NABETANI Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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MATSUMOTO Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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SEONG Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Maeng J.-t.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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Suemune I
Hiroshima Univ. Higashihiroshima
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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Thilakan Periyasamy
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Thilakan Periyasamy
Research Institute For Electronic Science Hokkaido University
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Seong Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Sasikala Ganapathy
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Nabetani Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
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Maeng J.-T.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Matsumoto Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
著作論文
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths