Uesugi K | Hokkaido Univ. Sapporo Jpn
スポンサーリンク
概要
関連著者
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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Suemune I
Hiroshima Univ. Higashihiroshima
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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鈴木 久男
静岡大学工学部物質工学科
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Kumano H
Research Institute For Electronic Science Hokkaido University
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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鈴木 久男
静岡大 創造科学技術大学院
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NASHIKI Hiroyuki
Research Institute for Electronic Science, Hokkaido University
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Nashiki Hiroyuki
Research Institute For Electronic Science Hokkaido University
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Avramescu Adrian
北海道大学電子科学研究所
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SHIMOYAMA Norio
Trichemical Laboratory Inc.
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Avramescu Adrian
Research Institute For Electronic Science Hokkaido University
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Suzuki Hideki
Research Institute For Electronic Science Hokkaido University
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Shimoyama N
Tri Chemical Laboratories Inc. Yamanashi Jpn
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SHIMOYAMA Norio
Trichemical Laboratory
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OBINATA Toshio
Research Institute for Electronic Science, Hokkaido University
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ARITA Munetaka
Research Center for Advanced Science and Technology, University of Tokyo
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Ueta Akio
Research Institute For Electronic Science Hokkaido University
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Arita M
Research Institute For Electronic Science Hokkaido University
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Arita Munetaka
Research Center For Advanced Science And Technology University Of Tokyo
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NUMAI Takahiro
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Ritsumeikan University, College of Science and Engineering
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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UETA Akio
Research Institute for Electronic science, Hokkaido University
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KUMANO Hidekazu
Department of Physics, Hokkaido University
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Numai T
Opto-electronics Research Laboratories Nec Corporation
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Numai Takahiro
Research Institute For Electronic Science Hokkaido University
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Morooka Nobuki
Research Institute For Electric Science Hokkaido University
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Sato G
Hokkaido Univ. Sapporo Jpn
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Sato Go
Research Institute For Electronic Science Hokkaido University
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Sato Go
Department Of Biochemistry Hoshi University School Of Pharmacy And Pharmaceutical Sciences
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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SASIKALA Ganapathy
Research Institute for Electronic Science, Hokkaido University
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NABETANI Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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MATSUMOTO Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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SHIMOZAWA Togo
Research Institute for Electronic Science, Hokkaido University
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KUMANO Hidekazu
Japan Advanced Institute of Science and Technology(JAIST)
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HE An-Qiang
Japan Advanced Institute of Science and Technology(JAIST)
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OTSUKA Nobuo
Japan Advanced Institute of Science and Technology(JAIST)
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AVRAMESCU Adrian
Hokkaido University, Research Institute for Electronic Science
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UETA Akio
Hokkaido University, Research Institute for Electronic Science
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UESUGI Katsuhiro
Hokkaido University, Research Institute for Electronic Science
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SUEMUNE Ikuo
Hokkaido University, Research Institute for Electronic Science
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TAWARA Takehiko
Research Institute for Electronic Science, Hokkaido University
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Shimozawa Togo
Research Institute For Electronic Science Hokkaido University
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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Nakahara Jun'ichiro
Department Of Physics Hokkaido University
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Nabetani Yoichi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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MOROOKA Nobuki
Research Institute for Electric Science, Hokkaido University
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Sasikala Ganapathy
Research Institute For Electronic Science Hokkaido University
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Thilakan Periyasamy
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Thilakan Periyasamy
Research Institute For Electronic Science Hokkaido University
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Matsumoto Takashi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Avramescu Adrian
Hokkaido University Research Institute For Electronic Science
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Ueta Akio
Hokkaido University Research Institute For Electronic Science
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NAKAHARA Jun'ichiro
Department of Physics, Hokkaido University
著作論文
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy
- Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
- Self-Organized CdSe Quantum Dots on (100)ZnSe/GaAs Surfaces Grown by Metalorganic Molecular Beam Epitaxy ( Quantum Dot Structures)
- Atomic Force Microscope Nanolithography on SiO_2/Semiconductor Surfaces ( Quantum Dot Structures)
- Purge Effect on Heterointerfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
- Excitonic Properties in ZnSe/MgS Superlattices
- Initial Growth Processes of ZnSe on Cleaned GaAs(001) Surfaces by Metalorganic Vapor Phase Epitaxy
- Excitonic properties of zinc-blende ZnSe/MgS superlattices studied by reflection spectroscopy
- Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy ( Quantum Dot Structures)
- Role of Indium on Nitrogen Incorporation in GaNAs Grown by Metalorganic Molecular-Beam Epitaxy
- Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements