KUMANO Hidekazu | Research Institute for Electronic Science, Hokkaido University
スポンサーリンク
概要
関連著者
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Kumano H
Research Institute For Electronic Science Hokkaido University
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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HAYASHI Yujiro
Research Institute for Electronic Science, Hokkaido University
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AKAZAKI Tatsushi
CREST, Japan Science and Technology Agency
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JO Masafumi
Research Institute for Electronic Science, Hokkaido University
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SASIKALA Ganapathy
Research Institute for Electronic Science, Hokkaido University
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NABETANI Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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MATSUMOTO Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi
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ZHANG Xi
Research Institute for Electronic Science, Hokkaido University
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SEONG Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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Suemune I
Hiroshima Univ. Higashihiroshima
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Hayashi Yujiro
Research Institute For Electronic Science Hokkaido University
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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Jo Masafumi
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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SHIMOYAMA Norio
Trichemical Laboratory Inc.
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THILAKAN Periyasamy
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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TANAKA Kazunori
Central Laboratory, Hamamatsu Photonics
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Asano Yasuhiro
Graduate Student Department Of Applied Physics And Chemistry Fukui University Of Technology
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MAENG J.-T.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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SEONG Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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GANAPATHY Sasikala
Research Institute for Electronic Science, Hokkaido University
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KIM B.
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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SHIMOZAWA Togo
Research Institute for Electronic Science, Hokkaido University
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Kim B.
Centre For Frontier Materials And Department Of Material Science And Engineering Kwangju Institute O
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Shimozawa Togo
Research Institute For Electronic Science Hokkaido University
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Nabetani Yoichi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Asano Yasuhiro
Graduate School Of Engineering Hokkaido University
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KURAMITSU Shuhei
Research Institute for Electronic Science, Hokkaido University
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TANAKA Kazunori
CREST, Japan Science and Technology Agency
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SASAKURA Hirotaka
Research Institute for Electronic Science, Hokkaido University
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INOUE Ryotaro
CREST, Japan Science and Technology Agency
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TAKAYANAGI Hideaki
CREST, Japan Science and Technology Agency
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HANAMURA Eiichi
Japan Science and Technology Agency
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ODASHIMA Satoru
Research Institute for Electronic Science, Hokkaido University
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Shimoyama N
Tri Chemical Laboratories Inc. Yamanashi Jpn
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Jo Masafumi
Quantum Dot Research Center National Institute For Materials Science
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Sasikala Ganapathy
Research Institute For Electronic Science Hokkaido University
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Odashima Satoru
Research Institute For Electronic Science Hokkaido University
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Kuramitsu Shuhei
Research Institute For Electronic Science Hokkaido University
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Hanamura Eiichi
Faculty Of Photonics Science And Technology Chitose Institute Of Science And Technology And Crest Ja
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Thilakan Periyasamy
Research Center For Micro-structure Devices Nagoya Institute Of Technology
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Thilakan Periyasamy
Research Institute For Electronic Science Hokkaido University
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Matsumoto Takashi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Seong Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea
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SHIMOYAMA Norio
Trichemical Laboratory
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Kan Hirofumi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Akazaki Tatsushi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Tanaka Kazunori
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Uesugi Katsuhiro
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Endo Michiaki
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Takayanagi Hideaki
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Yamanishi Masamichi
Japan Science and Technology Corporation (CREST), Kawaguchi, Saitama 332-0012, Japan
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Zhang Xi
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Ganapathy Sasikala
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
著作論文
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- A Cooper-Pair Light-Emitting Diode : Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime
- Superconductor-Based Quantum-Dot Light-Emitting Diodes: Role of Cooper Pairs in Generating Entangled Photon Pairs
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots