SEONG Tae-Yeon | Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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概要
- 同名の論文著者
- Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute の論文著者
関連著者
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KUMANO Hidekazu
Research Institute for Electronic Science, Hokkaido University
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ZHANG Xi
Research Institute for Electronic Science, Hokkaido University
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SEONG Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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Ganapathy Sasikala
Research Institute For Electronic Science Hokkaido University
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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GANAPATHY Sasikala
Research Institute for Electronic Science, Hokkaido University
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KIM B.
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute
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Kim B.
Centre For Frontier Materials And Department Of Material Science And Engineering Kwangju Institute O
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Seong Tae-Yeon
Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Zhang Xi
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Ganapathy Sasikala
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
著作論文
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots