Sato Go | Research Institute For Electronic Science Hokkaido University
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概要
関連著者
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Sato Go
Research Institute For Electronic Science Hokkaido University
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Sato G
Hokkaido Univ. Sapporo Jpn
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Sato Go
Department Of Biochemistry Hoshi University School Of Pharmacy And Pharmaceutical Sciences
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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Suemune I
Hiroshima Univ. Higashihiroshima
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SHIMOYAMA Norio
Trichemical Laboratory Inc.
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SHIMOYAMA Norio
Trichemical Laboratory
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平野 克己
High Energy Accelerator Res.organization Ibaraki Jpn
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HOSHIYAMA Mitsuo
Research Institute of Applied Electricity, Hokkaido University
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HIRANO Kenkichi
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Research Institute for Electronic Science, Hokkaido University
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Machida Hiroshi
Department Of Applied Physics Science University Of Tokyo
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Numai Takahiro
Research Institute For Electronic Science Hokkaido University
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Shimoyama N
Tri Chemical Laboratories Inc. Yamanashi Jpn
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Hoshiyama Mitsuo
Research Institute For Electronic Science Hokkaido University
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兵藤 一行
高エネルギー加速器研究機構 物質構造科学研究所 放射光科学研究施設
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兵藤 一行
筑波大学 放射線
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兵藤 一行
高エネルギー加速器研究機構
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Hyodo K
High Energy Accelerator Res. Organization
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OBINATA Toshio
Research Institute for Electronic Science, Hokkaido University
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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NUMAI Takahiro
Ritsumeikan University, College of Science and Engineering
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Katsuhiro Uesugi
Research Institute For Electronic Science Hokkaido University
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Numai T
Opto-electronics Research Laboratories Nec Corporation
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Uesugi K
Hokkaido Univ. Sapporo Jpn
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Shimoyama Norio
Trichemical Laboratory Inc., 8154–217 Uenohara, Kitatsurugun, Yamanashi 409–01, Japan
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Numai Takahiro
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
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SATO Go
Research Institute for Electronic Science, Hokkaido University
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Hoshiyama Mitsuo
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
著作論文
- P-Type Doping Limits in ZnMgSSe and ZnSSe Compound Semicomductors
- On p-Type Doping Limits in ZuMgSSe Quaternary Semiconductors
- Metalorganic MBE Growth of Nitrogen-doped ZnSe:TAN Doping and Nitrogen Plasma Doping
- MOMBE Growth of Nitrogen-Doped p-Type ZnSe
- Temperature Dependence of ZnS Growth with Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide
- Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping