Metalorganic MBE Growth of Nitrogen-doped ZnSe: TAN Doping and Nitrogen Plasma Doping
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概要
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Growth of ZnSe and nitrogen doping were carried out by metalorganic molecular beam epitaxy (MOMBE). In this study metalorganic precursors were introduced into the growth chamber directly without precracking. We studied two nitrogen doping techniques. First, doping with the nitrogen precursor triallylamine (TAN) was studied. It was found that TAN decomposes above 300°C by quadrupole mass spectrometry. The doping properties of TAN were critically dependent on the VI/II ratio during growth. However contrary to our expectation, the doped ZnSe films tended to be n-type. The other nitrogen-doping technique involves doping with nitrogen gas activated by an electron cyclotron resonance plasma. In the samples doped with the nitrogen plasma, donor-acceptor pair emission was dominant. The net acceptor concentration up to 2.3×1017 cm-3 was measured in samples grown using this doping technique.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Sato Go
Research Institute For Electronic Science Hokkaido University
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MACHIDA Hideaki
Trichemical Laboratory Inc.
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Numai Takahiro
Research Institute For Electronic Science Hokkaido University
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Hoshiyama Mitsuo
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Shimoyama Norio
Trichemical Laboratory Inc., 8154–217 Uenohara, Kitatsurugun, Yamanashi 409–01, Japan
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SHIMOYAMA Norio
Trichemical Laboratory
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Numai Takahiro
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
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Hoshiyama Mitsuo
Research Institute for Electronic Science, Hokkaido University, Sapporo 060, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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