Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
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概要
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Nucleation and growth mode of GaN during molecular beam epitaxy on vicinal SiC surfaces, consisting of a pair of self-ordered periodic nanofacets, (0001) and ($11\bar{2}n$), are investigated. Well-defined surface nanostructures on SiC enable us to understand growth physics. Here, the Ga-adsorption process on SiC is noticed in particular, and its effects on initial GaN growth stages are examined using reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). With the presence of a Ga-adlayer on a SiC surface, GaN nucleation occurs at step sites on ($11\bar{2}n$) facets, followed by step-flow growth. In contrast, without a Ga-adlayer, GaN nucleation is predominantly observed on (0001) terraces. Interestingly, the crystal structure of the resultant film differs in each case from a typical wultzite (2H) to a 6H-polytype, without and with a Ga-adlayer, respectively.
- Japan Society of Applied Physicsの論文
- 2007-04-25
著者
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Tanaka Satoru
Research Institute For Electronic Science Hokkaido University
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Ebihara Masato
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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