Realization of Low Dislocation GaN/Sapphire Wafers by 3-Step Metalorganic Vapor Phase Epitaxial Growth with Island Induced Dislocation Control

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-05-15

著者

• TANAKA Satoru

  Research Institute for Electronic Science, Hokkaido University

• Fujikura Hajime

  Advanced Research Center Hitachi Cable Ltd.

• IIZUKA Kazuyuki

  Advanced Research Center, Hitachi Cable Ltd.

• Tanaka Satoru

  Research Institute For Electronic Science Hokkaido University

• Iizuka Kazuyuki

  Advanced Research Center Hitachi Cable Ltd.

関連論文

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• Nucleation Stages of Carbon Nanotubes on SiC(0001) by Surface Decomposition
• Realization of Low Dislocation GaN/Sapphire Wafers by 3-Step Metalorganic Vapor Phase Epitaxial Growth with Island Induced Dislocation Control
• A UV Light-Emitting Diode Incorporating GaN Quantum Dots
• Nucleation and Growth Mode of GaN on Vicinal SiC Surfaces
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