Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 1997-12-01
著者
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UESUGI Katsuhiro
Research Institute for Electronic Science, Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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