Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy
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概要
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Luminescence properties of ZnSe/MgS superlattices (SLs) grown by metalorganic vapor phase epitaxy (MOVPE) were characterized using photoluminescence (PL) and reflection measurements. At low temperature, PL peaks originating from localized excitons which were confined by monolayer fluctuations were clearly observed. It was found that the luminescence efficiency of localized excitons was very high, probably nearly 100%. The thermalization of localized excitons to free excitons with the increase of temperature leads to a blue shift of the PL peak energy and an abrupt decrease of the luminescence intensity. This decrease of the luminescence intensity is attributed to the capture of free excitons by nonradiative centers. A SL which shows luminescence from continuously distributed tailed states exhibited a temperature dependence much different from that of the above SLs which show luminescence from the localized excitons defined by the interface fluctuations.
- 1997-06-30
著者
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Suzuki Hideki
Research Institute For Electronic Science Hokkaido University
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Nashiki Hiroyuki
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Kita-ku, Sapporo 060, Japan
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Kita-ku, Sapporo 060, Japan
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Suzuki Hideki
Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Kita-ku, Sapporo 060, Japan
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