Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
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概要
- 論文の詳細を見る
The role of nitrogen (N) in emission wavelengths from InAs quantum dots (QDs) was studied with intentional supplies of a N precursor (monomethylhydrazine) to InAs dot surfaces just before burying them with GaAs capping layers by metalorganic molecular-beam epitaxy. Luminescence from the InAs QDs showed a red shift with the N-precursor supplies on the dot surfaces, and more clear separations of the luminescence sub peaks originating from QD excited-state transitions were observed. The increase in the N precursor supplies on the dot surfaces however changed the relative variation in the emission wavelengths from the red shift to the blue shift. Additional observations of the dot sizes as well as the model calculations of the emission peaks and of the energy separations of the lowest and QD excited-state transitions showed that the red shift is due to the reduced Ga inclusion in the InAs QDs and that the blue shift is due to the reduced dot sizes.
- Japan Society of Applied Physicsの論文
- 2006-06-25
著者
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SEONG Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Maeng J.-t.
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Nabetani Yoichi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Sasikala Ganapathy
Research Institute For Electronic Science Hokkaido University
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Suemune Ikuo
Research Institute For Electronic Science Hokkaido University
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Uesugi Katsuhiro
Research Institute For Electronic Science Hokkaido University
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Matsumoto Takashi
Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi
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Seong Tae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Uesugi Katsuhiro
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Kumano Hidekazu
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Sasikala Ganapathy
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Kumano Hidekazu
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Nabetani Yoichi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
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Maeng J.-T.
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Puk-gu, Gwangju 500-712, Korea
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Suemune Ikuo
Research Institute for Electronic Science, Hokkaido University, Souseitou, Kita 21, Nishi 10, Sapporo 001-0021, Japan
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Suemune Ikuo
Reseach Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Matsumoto Takashi
Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan
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