UMEDA Yohtaro | NTT System Electronics Laboratories

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概要

• 同名の論文著者
• NTT System Electronics Laboratoriesの論文著者

関連著者

• UMEDA Yohtaro

  NTT System Electronics Laboratories

• Umeda Y

  Ntt Photonics Lab. Kanagawa Jpn

• ENOKI Takatomo

  NTT System Electronics Laboratories

• Enoki Takatomo

  Ntt Photonics Laboratories

• Umeda Yohtaro

  Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation

• YOKOYAMA Haruki

  NTT System Electronics Laboratories

• ISHII Yasunobu

  NTT System Electronics Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Yokoyama H

  Kddi R&d Laboratories Inc.

• Otsuji Taiichi

  Ntt Network Innovation Laboratories

• Otsuji Taiichi

  Ntt Optical Network Systems Laboratories

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Otsuji T

  Kyushu Inst. Of Technol. Iizuka‐shi Jpn

• SUEMITSU Tetsuya

  NTT System Electronics Laboratories

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

• MURATA Koichi

  NTT Optical Network Systems Laboratories

• YONEYAMA Mikio

  NTT Optical Network Systems Laboratories

• Murata K

  Ntt Photonics Laboratories

• OTSUJI Taiichi

  Optical Network Systems Laboratories

• Ikuta K

  Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En

• Ikuta Kenji

  Ntt System Electronics Laboratories

• Murata K

  Ntt Corp. Atsugi‐shi Jpn

• Yoneyama Mikio

  Ntt Electronics Corporation

• OSAFUNE Kazuo

  NTT System Electronics Laboratories

• Murata K

  Ntt Photonics Laboratories Ntt Corporation

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著作論文

• Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
• 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
• Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
• Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates

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