Yokoyama H | Kddi R&d Laboratories Inc.

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
Design Methods for Utility Max-Min Fair Share Networks(Network)
Prototype System of SLAMNet : Implementation and Performance Analysis of Signaling-Free Wavelength Path Switching Network(Network)
49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs

スポンサーリンク