Significance of Ultra Clean Technology in the Era of ULSIs (Special Issue on Scientific ULSI Manufacturing Technology)
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概要
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The realization of scientific manufacturing of ULSIs in the 21st century will require the development of a technical infrastructure of "Ultra Clean Technology" and the firm establishment of the three principles of high performance processes. Three principles are 1) Ultra Clean Si Wafer Surface, 2) Ultra Clean Processing Environment, and 3) Perfect Parameter controlled process. This paper describes the methods of resolving the problems inherent in Ultra Clean Technology, taking as examples issues in quarter-micron or more advanced semiconductor process and manufacturing equipment, particularly when faced with the challenges of plasma dry etching. Issues indispensable to the development of tomorrow's highly accurate and reliable plasma dry etching equipment are the development of technologies for the accurate measurement of plasma parameters, ultra clean gas delivery systems, chamber cleaning technology on an in-situ basis, and simulating the plasma chemistry. This paper also discusses the standardization of semiconductor manufacturing equipment, which is considered one of the ways to reduce the steep rise in production line construction costs. The establishment of Ultra Clean Technology also plays a vital role in this regard.
- 1996-03-25
著者
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NITTA Takahisa
Device Development Center, Hitachi, Ltd.
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Nitta Takahisa
Device Development Center Hitachi Ltd.
関連論文
- Significance of Ultra Clean Technology in the Era of ULSIs (Special Issue on Scientific ULSI Manufacturing Technology)
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