Quanititative Study of Implanted Gold Atoms in Silicon p^+-n Junctions by Measurement of the Thermally-Stimulated Current

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-09-05

著者

• Nitta Takahisa

  Device Development Center Hitachi Ltd.

• Higuchi Hisayuki

  Central Research Laboratory Hitachi Ltd.

• AKAHANE Ryouzou

  Naka Works, Hitachi Ltd.

• Akahane Ryouzou

  Naka Works Hitachi Ltd.

関連論文

• Significance of Ultra Clean Technology in the Era of ULSIs (Special Issue on Scientific ULSI Manufacturing Technology)
• Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
• Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Analog Circuit Design Methodology in a Low Power RISC Microprocessor (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
• Preservation of Point Defect Distribution in FZ Silicon
• A 2-ns-Access, 285-MHz, Two-Port Cache Macro Using Double Global Bit-Line Pairs
• A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology)
• Quanititative Study of Implanted Gold Atoms in Silicon p^+-n Junctions by Measurement of the Thermally-Stimulated Current
• Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope
• The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation
• Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers
• Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4 Films
• Effects of Oxidation on Aluminum Diffusion in Silicon
• Retardation of Sb Diffusion in Si during Thermal Oxidation
• Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4
• Anomalous Phosphorus Diffusion in Si Directly Masked with Si_3N_4 Films

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