Preservation of Point Defect Distribution in FZ Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-01-20
著者
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Mizuno Shoichi
Central Research Laboratory Hitachi Ltd.
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HIGUCHI Hisayuki
Central Research Laboratory, Hitachi Ltd.
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Higuchi Hisayuki
Central Research Laboratory Hitachi Ltd.
関連論文
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- Preservation of Point Defect Distribution in FZ Silicon
- A 2-ns-Access, 285-MHz, Two-Port Cache Macro Using Double Global Bit-Line Pairs
- A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology)
- Quanititative Study of Implanted Gold Atoms in Silicon p^+-n Junctions by Measurement of the Thermally-Stimulated Current
- Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope
- The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation
- Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers
- Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4 Films
- Effects of Oxidation on Aluminum Diffusion in Silicon
- Retardation of Sb Diffusion in Si during Thermal Oxidation
- Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4
- Anomalous Phosphorus Diffusion in Si Directly Masked with Si_3N_4 Films