Retardation of Sb Diffusion in Si during Thermal Oxidation

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概要

• 論文の詳細を見る

• Investigation of Sb diffusion in Si during thermal oxidation using LOCUS (L0Cal Oxidation of Silicon) shows that diffusion of Sb in Si is retarded during thermal oxidation. This suggests that the diffusion mechanism of Sb differs from those of B and P, which diffuse faster during thermal oxidation. A model which can explain both enhanced and retarded diffusion of impurities in Si during oxidation is proposed. The model assumes that B and P diffuse only by interstitials, Sb diffuses only by vacancies and As diffuses by both vacancies and interstitials.

• 社団法人応用物理学会の論文
• 1981-04-05

著者

• Higuchi Hisayuki

  Central Research Laboratory Hitachi Ltd.

• MIZUO Shoichi

  Central Research Laboratory, Hitachi Ltd.

• Mizuo Shoichi

  Central Research Laboratory Hitachi Ltd.

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