Higuchi Hisayuki | Central Research Laboratory Hitachi Ltd.

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著作論文

Analog Circuit Design Methodology in a Low Power RISC Microprocessor (Srecial Section on Analong Circuit Tectningues in the Digital-oriented Era)
Preservation of Point Defect Distribution in FZ Silicon
A 2-ns-Access, 285-MHz, Two-Port Cache Macro Using Double Global Bit-Line Pairs
A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology)
Quanititative Study of Implanted Gold Atoms in Silicon p^+-n Junctions by Measurement of the Thermally-Stimulated Current
Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope
The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation
Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers
Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4 Films
Effects of Oxidation on Aluminum Diffusion in Silicon
Retardation of Sb Diffusion in Si during Thermal Oxidation
Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4
Anomalous Phosphorus Diffusion in Si Directly Masked with Si_3N_4 Films

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