Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4 Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1981-09-05

著者

• Higuchi Hisayuki

  Central Research Laboratory Hitachi Ltd.

• MIZUO Shoichi

  Central Research Laboratory, Hitachi Ltd.

• Mizuo Shoichi

  Central Research Laboratory Hitachi Ltd.

関連論文

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• Quanititative Study of Implanted Gold Atoms in Silicon p^+-n Junctions by Measurement of the Thermally-Stimulated Current
• Observations of Channels of MOS Field Effect Transistors Using a Scanning-Electron Microscope
• The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation
• Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers
• Suppression by Pre-Diffusion Annealing of Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4 Films
• Effects of Oxidation on Aluminum Diffusion in Silicon
• Retardation of Sb Diffusion in Si during Thermal Oxidation
• Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4
• Anomalous Phosphorus Diffusion in Si Directly Masked with Si_3N_4 Films

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