Anomalous Diffusion of B and P in Si Directly Masked with Si_3N_4

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概要

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• Diffusion of B and P in Si directly masked with Si_3N_4 films is found to have anomalous characteristics depending on temperature, time, and Si crystal growing method. The discrepancy in diffusion between CZ and FZ substrates under Si_3N_4 films is explained well assuming the Si-SiO_2 interface acts as a sink for super-saturated interstitials. The Si-Si_3N_4 interface does not have such an effect. It is also found that super-saturated interstitials enhance the diffusion of B and P in CZ Si crystals directly masked with Si_3N_4 films.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• Higuchi Hisayuki

  Central Research Laboratory Hitachi Ltd.

• MIZUO Shoichi

  Central Research Laboratory, Hitachi Ltd.

• Mizuo Shoichi

  Central Research Laboratory Hitachi Ltd.

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