Effects of Oxidation on Aluminum Diffusion in Silicon
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概要
- 論文の詳細を見る
Aluminum diffusion in Si affected by thermal oxidation is investigated. Aluminum diffusion in (100) oriented Si is enhanced by thermal oxidation. On the other hand, that in (111) oriented Si is enhanced at low temperature but retarded at high temperature. The difference in the diffusion of Al in Si masked with double-layered SiO_2-Si_3N_4 films and with directly-formed Si_3N_4 films is found to be very small compared to the case of B and P. Furthermore, the addition of HCl to the oxidizing ambient is found to reduce the anomalous diffusion caused by oxidation. These experimental results are explained assuming that the diffusion of Al in Si proceeds by the interstitialcy mechanism in the Si.
- 社団法人応用物理学会の論文
- 1982-01-05
著者
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Higuchi Hisayuki
Central Research Laboratory Hitachi Ltd.
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MIZUO Shoichi
Central Research Laboratory, Hitachi Ltd.
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Mizuo Shoichi
Central Research Laboratory Hitachi Ltd.
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