Relative Integrated Intensity of the X-Ray Diffraction and Effective Charge in GaAs_<1-x>P_x Compounds

概要

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An X-ray study with CuK_α is carried out on fine-powder samples of GaP, GaAs and their quasi-binary compounds. Integrated intensities of 14 lines from the (111) to the (533) are measured on a relative scale. The temperature factors of individual atoms are determined by the condition of minimizing the R-factor. The assumption that the atomic scattering factor of the group V atom in the quasi-binary compounds is represented by a linear combination of constituent group V atoms is shown to be valid from the experimental analysis. The variation of the effective charge in the GaAs-GaP quasi-binary system is estimated in three ways. The fact that negative charge is transferred from the group III atom to the group V atom is concluded in GaP, GaAs and their quasi-binary compounds.
社団法人応用物理学会の論文
1971-07-05