Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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概要

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• Self-Q-switching in GaN-based multisection laser diodes (MS-LDs) is investigated. The influence of the absorption on threshold currents and charge carrier lifetimes in the absorber section are measured and discussed in the context of the band structure at high reverse bias. Our system employs a bowtie geometry, i.e., with the absorber section positioned in the center of the laser cavity and a tapered shape of the laser ridge. The shortest pulses were in the 10 picosecond range, obtained at a constant reverse bias of -36 V applied to the absorber section, the gain section was driven at 0.57 A. The emission wavelength was around 405 nm.

• 2013-08-25

著者

• Kohler Klaus

  Fraunhofe-institut Fur Angewandte Festkorperphysik

• WAGNER Joachim

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• SCHWARZ Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF

• Schwarz Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Holc Katarzyna

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Weig Thomas

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Wagner Joachim

  Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany

• Köhler Klaus

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Weig Thomas

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

• Wagner Joachim

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

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