Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection

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概要

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• We present a blue InGaN research and development superluminescent light-emitting diode (SLED) that is suitable for picoprojection. The SLED reaches an output power of {>}100 mW with a peak wavelength of 443 nm and a spectral bandwidth of {>}2.6 nm as well as a single-mode far-field driven in cw mode at 25 °C. In order to figure out an optimized waveguide design, which enables such a high output power at lowest operation current, we compare the performance of diodes with curved and tilted shaped ridges in detail, using the lasing threshold current as a criterion for lasing or superluminescence, respectively.

• 2013-08-25

著者

• EICHLER Christoph

  Osram Opto-Semiconductors GmbH

• SCHWARZ Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF

• STRAUSS Uwe

  OSRAM Opto Semiconductors GmbH

• KOPP Fabian

  OSRAM Opto Semiconductors GmbH

• Schwarz Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

• Weig Thomas

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Strauss Uwe

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• Lell Alfred

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• Tautz Sönke

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• Ristić Jelena

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• Stojetz Bernhard

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• Weig Thomas

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

• Eichler Christoph

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

• EICHLER Christoph

  OSRAM Opto Semiconductors GmbH

• Hö{\ss} Christine

  OSRAM Opto Semiconductors GmbH, D-93055 Regensburg, Germany

関連論文

• True Green Laser Diodes at 524nm with 50mW Continuous Wave Output Power on c-Plane GaN
• Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
• Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells
• Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
• Cyan Superluminescent Light-Emitting Diode Based on InGaN Quantum Wells
• Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
• Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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