Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
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概要
- 論文の詳細を見る
- 2012-04-25
著者
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SCHEIBENZUBER Wolfgang
Fraunhofer Institute for Applied Solid State Physics IAF
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SCHWARZ Ulrich
Fraunhofer Institute for Applied Solid State Physics IAF
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Scheibenzuber Wolfgang
Fraunhofer Inst. Applied Solid State Physics Iaf Freiburg Deu
関連論文
- Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
- Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
- Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
- Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
- Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias