Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
High power blue-violet superluminescent light emitting diodes with InGaN quantum wells
AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells
Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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