Grandjean Nicolas | Laspe Icmp Ecole Polytechnique Federale De Lausanne

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著作論文

Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells
Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

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