Grandjean Nicolas | Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

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著作論文

Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing
ZrO
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

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