GRANDJEAN Nicolas | Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne

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著作論文

Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

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