Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-09-25
著者
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Sun Haifeng
Millimeter-wave Electronics Group Eth-zurich
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Alt Andreas
Millimeter-wave Electronics Group Eth-zurich
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BENEDICKTER Hansruedi
Millimeter-Wave Electronics Group, ETH-Zurich
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BOLOGNESI C.
Millimeter-Wave Electronics Group, ETH-Zurich
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FELTIN Eric
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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CARLIN Jean-Francois
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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GONSCHOREK Marcus
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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GRANDJEAN Nicolas
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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Feltin Eric
Novagan Chemin De Mornex 5
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Bolognesi C.
Millimeter-wave Electronics Group Eth-zurich
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Grandjean Nicolas
Laspe Icmp Ecole Polytechnique Federale De Lausanne
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Carlin Jean-Fran{c}ois
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 La
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Gonschorek Marcus
Institute Of Quantum Electronics And Photonics Ecole Polytechnique Federale De Lausanne
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Benedickter Hansruedi
Millimeter-wave Electronics Group Eth-zurich
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Carlin Jean-francois
Ecole Polytechnique Federale De Lausanne Epfl
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Gonschorek Marcus
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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