110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

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概要

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• We characterize the microwave loss in coplanar waveguides (CPWs) on AlGaN/GaN high-electron mobility transistor (HEMT) buffer layers on high-resistivity silicon (HR-Si) substrates, up to 110 GHz. To our knowledge, this is the first broadband characterization of CPWs on GaN-on-Si. Conventional CPWs on commercially available AlGaN/GaN on HR-Si HEMT layers show a loss as low as 0.8 dB/mm at 110 GHz. Losses are further reduced by etching trenches between the CPW conductors, reaching 0.47 dB/mm at 110 GHz. The work shows that CPWs on GaN-on-Si exhibit performances comparable to those built on semi-insulating InP, demonstrating the suitability of GaN-on-Si technology in millimeter-wave applications.

• 2010-12-25

著者

• Alt Andreas

  Millimeter-wave Electronics Group Eth-zurich

• Bolognesi C.

  Millimeter-wave Electronics Group Eth-zurich

• Marti Diego

  Thz Electronics Group Eth-zurich

• Vetter Mathias

  Thz Electronics Group Eth-zurich

• Marti Diego

  Millimeter-wave Electronics Group Eth-zurich

• Vetter Mathias

  Millimeter-wave Electronics Group Eth-zurich

• Benedickter Hansruedi

  Millimeter-wave Electronics Group Eth-zurich

関連論文

• Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
• Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates
• 110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates
• RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
• AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz
• AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

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