RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
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概要
- 論文の詳細を見る
- 2011-06-25
著者
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Cordier Yvon
Centre National De La Recherche Scientifique-centre De Recherche Sur L'hetero-epitaxie Et Ses A
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Bolognesi C.
Millimeter-wave Electronics Group Eth-zurich
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Marti Diego
Millimeter-wave Electronics Group Eth-zurich
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CHMIELOWSKA Magdalena
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scien
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RAMDANI Mohammed
Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scien
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Ramdani Mohammed
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
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Chmielowska Magdalena
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
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Cordier Yvon
Centre De Recherche Sur L'hetero-epitaxie Et Ses Applications Centre National De La Recherche S
関連論文
- Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
- Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate
- 110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates
- RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110)
- AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz
- AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz