Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-11-25
著者
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Sun Haifeng
Millimeter-wave Electronics Group Eth-zurich
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Alt Andreas
Millimeter-wave Electronics Group Eth-zurich
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SUN Haifeng
THz Electronics Group, ETH-Zurich
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ALT Andreas
THz Electronics Group, ETH-Zurich
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MARTI Diego
THz Electronics Group, ETH-Zurich
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VETTER Mathias
THz Electronics Group, ETH-Zurich
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BENEDICKTER Hansruedi
THz Electronics Group, ETH-Zurich
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BOLOGNESI C.
THz Electronics Group, ETH-Zurich
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Marti Diego
Thz Electronics Group Eth-zurich
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Vetter Mathias
Thz Electronics Group Eth-zurich
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Benedickter Hansruedi
Millimeter-wave Electronics Group Eth-zurich
関連論文
- Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
- Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates
- 110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates