Alt Andreas | Millimeter-wave Electronics Group Eth-zurich
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概要
関連著者
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Alt Andreas
Millimeter-wave Electronics Group Eth-zurich
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Benedickter Hansruedi
Millimeter-wave Electronics Group Eth-zurich
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Sun Haifeng
Millimeter-wave Electronics Group Eth-zurich
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Bolognesi C.
Millimeter-wave Electronics Group Eth-zurich
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Marti Diego
Thz Electronics Group Eth-zurich
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Vetter Mathias
Thz Electronics Group Eth-zurich
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BENEDICKTER Hansruedi
Millimeter-Wave Electronics Group, ETH-Zurich
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BOLOGNESI C.
Millimeter-Wave Electronics Group, ETH-Zurich
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FELTIN Eric
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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CARLIN Jean-Francois
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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GONSCHOREK Marcus
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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GRANDJEAN Nicolas
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Federale de Lausanne
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Feltin Eric
Novagan Chemin De Mornex 5
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Grandjean Nicolas
Laspe Icmp Ecole Polytechnique Federale De Lausanne
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SUN Haifeng
THz Electronics Group, ETH-Zurich
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ALT Andreas
THz Electronics Group, ETH-Zurich
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MARTI Diego
THz Electronics Group, ETH-Zurich
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VETTER Mathias
THz Electronics Group, ETH-Zurich
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BENEDICKTER Hansruedi
THz Electronics Group, ETH-Zurich
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BOLOGNESI C.
THz Electronics Group, ETH-Zurich
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Carlin Jean-Fran{c}ois
Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 La
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Marti Diego
Millimeter-wave Electronics Group Eth-zurich
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Vetter Mathias
Millimeter-wave Electronics Group Eth-zurich
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Gonschorek Marcus
Institute Of Quantum Electronics And Photonics Ecole Polytechnique Federale De Lausanne
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Carlin Jean-francois
Ecole Polytechnique Federale De Lausanne Epfl
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Gonschorek Marcus
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
著作論文
- Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
- Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates
- 110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates