Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
スポンサーリンク
概要
著者
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Chichibu Shigefusa
Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Ganiere Jean-Daniel
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Corfdir Pierre
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Kagaya Munehito
CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Deveaud-Plédran Benoît
Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), 1015 Lausanne, Switzerland
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- Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
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