ZrO

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概要

• 論文の詳細を見る

• We report on InAlN/GaN heterostructure metal--oxide--semiconductor field-effect transistors (MOSHFETs) with an InAlN barrier layer of different compositions (x_{\text{InN}} = 13, 17, and 21%) and ZrO<inf>2</inf>gate-insulator/passivation. Static measurements yielded higher drain currents than those on unpassivated HFET counterparts and the currents increased with decreased x_{\text{InN}}. Post deposition annealing of the ZrO<inf>2</inf>insulator had less influence on the static performance but remarkable changes were observed on the capacitance--voltage characteristics. The capacitance hysteresis in both channel depletion and barrier accumulation regions was significantly suppressed after annealing. This indicates a reduction of the interfacial trap states and of fixed charge in the oxide. Pulsed current--voltage measurements confirmed this conclusion --- the gate lag of only {\sim}80% was evaluated for 200 ns pulse width, independently on the composition of the InAlN barrier layer. These results support an application of high permittivity ZrO<inf>2</inf>gate-insulator/passivation for the preparation of high-performance InAlN/GaN MOSHFETs.

• 2013-08-25

著者

• Carlin Jean-Francois

  Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland

• Gregusova Dagmar

  Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia

• Grandjean Nicolas

  Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

• Stoklas Roman

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Kordoš Peter

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Hušeková Kristína

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Blaho Michal

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Jurkovič Michal

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Kordoš Peter

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Blaho Michal

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

• Jurkovič Michal

  Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, SK-84104 Bratislava, Slovakia

関連論文

• Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
• Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
• Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors
• Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
• Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
• Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
• Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing
• ZrO
• Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
• Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

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